? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dsx t j = 25 c to 150 c 200 v v dgx t j = 25 c to 150 c, r gs = 1m 200 v v gsx continuous 20 v v gsm transient 30 v p d t c = 25 c 695 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 4 g ds100260a(08/12) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dsx v gs = - 5v, i d = 250 a 200 v v gs(off) v ds = 25v, i d = 4ma - 2.0 - 4.0 v i gsx v gs = 20v, v ds = 0v 100 na i dsx(off) v ds = v dsx , v gs = - 5v 5 a t j = 125 c 100 a r ds(on) v gs = 0v, i d = 8a, note 1 73 m i d(on) v gs = 0v, v ds = 25v, note 1 16 a depletion mode mosfet n-channel IXTH16N20D2 ixtt16n20d2 v dsx = 200v i d(on) > 16a r ds(on) 73m features ? normally on mode ? international standard packages ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? audio amplifiers ? start-up circuits ? protection circuits ? ramp generators ? current regulators ? active loads g = gate d = drain s = source tab = drain to-247 (ixth) to-268 (ixtt) g s d (tab) s g d (tab) d preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTH16N20D2 ixtt16n20d2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 8a, note 1 7 12 s c iss 5500 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 1360 pf c rss 607 pf t d(on) 46 ns t r 130 ns t d(off) 270 ns t f 135 ns q g(on) 208 nc q gs v gs = + 5v, v ds = 100v, i d = 8a 28 nc q gd 110 nc r thjc 0.18 c/w r thcs 0.21 c/w safe-operating-area specification characteristic values symbol test conditions min. typ. max. soa v ds = 200v, i d = 2.1a, t c = 75 c, tp = 5s 420 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v sd i f = 16a, v gs = -10v, note 1 0.8 1.3 v t rr 265 ns i rm 14.3 a q rm 1.9 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = + 5v, v ds = 100v, i d = 8a r g = 3.3 (external) i f = 8a, -di/dt = 100a/ s v r = 100v, v gs = -10v e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 outline terminals: 1 - gate 2 - drain 3 - source tab - drain preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2012 ixys corporation, all rights reserved IXTH16N20D2 ixtt16n20d2 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v ds - volts i d - amperes v gs = 5v 4v 3v 2v -2v - 3v 1v 0v -1v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 v ds - volts i d - amperes 0v 1v 2v - 1v -2v v gs = 5v 1v 1.5v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 0 0.2 0.4 0.6 0.8 1 1.2 v ds - volts i d - amperes -1v -2v -3v v gs = 5v 4v 3v 2v 1v 0v fig. 6. dynamic resistance vs. gate voltage 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 -5 -4 -3 -2 -1 0 v gs - volts r o - ohms t j = 25oc t j = 100oc ? v ds = 50v - 25v fig. 4. drain current @ t j = 25oc 0 4 8 12 16 20 24 28 32 36 01020304050 v ds - volts i d - amperes v gs = 0v - 0.4v - 0.8v - 1.2v - 1.6v - 2.0v - 2.4v fig. 5. drain current @ t j = 100oc 0 4 8 12 16 20 24 28 32 36 40 0 1020304050 v ds - volts i d - amperes v gs = 0v - 0.4v - 0.8v - 1.2v - 1.6v - 2.0v - 2.4v
ixys reserves the right to change limits, test conditions, and dimensions. IXTH16N20D2 ixtt16n20d2 fig. 7. normalized r ds(on) vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 0v i d = 8a fig. 8. r ds(on) normalized to i d = 8a value vs. drain current 0.2 0.6 1.0 1.4 1.8 2.2 2.6 0 5 10 15 20 25 30 35 40 i d - amperes r ds(on) - normalized v gs = 0v 5v - - - - t j = 125oc t j = 25oc fig. 9. input admittance 0 10 20 30 40 50 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc v ds = 20v fig. 10. transconductance 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc, 25oc, 125oc v ds = 20v fig. 12. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc v gs = -10v t j = 25oc fig. 11. normalized breakdown and threshold voltages vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v gs(off) v gs(off) @ v ds = 25v bv dsx @ v gs = - 5v
? 2012 ixys corporation, all rights reserved ixys ref: t_16n20d2(8c)4-08-10 IXTH16N20D2 ixtt16n20d2 fig. 17. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 17. maximum transient thermal impedance hvjv 0.300 fig. 14. gate charge -5 -4 -3 -2 -1 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v gs - volts v ds = 100v i d = 8a i g = 10ma fig. 13. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 15. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms 100ms dc 25s fig. 16. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms 100ms dc
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